Sfoglia per Rivista IEEE ELECTRON DEVICE LETTERS
Energy minimization and Kirchhoff’s laws in Negative Capacitance Ferroelectric Capacitors and MOSFETs
2017-01-01 Rollo, Tommaso; Esseni, David
Evidence of Substrate Enhanced High Energy Tails in the Distribution Function of Deep Submicron MOSFETs by Light Emission Measurements
1999-01-01 Pavesi, M; Selmi, Luca; Manfredi, M; Sangiorgi, Enrico; Mastrapasqua, M; Bude, J.
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers
2005-01-01 Esseni, David; Palestri, Pierpaolo
Hot Hole Gate Current in Surface Channel p-MOSFETs
2001-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.
Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K
1989-01-01 Lanzoni, M; Manfredi, M; Selmi, Luca; Sangiorgi, Enrico; Cappelletti, R; Ricco, B.
Hysteresis cycle in the Latch-up characteristic of wide CMOS structures
1988-01-01 Selmi, Luca; Sangiorgi, Enrico; Crisenza, G; Re, D; Ricco, B.
Impact of band structure on charge trapping in thin SiO2/Al2O3/Poly-Si gate stacks
2004-01-01 L., Pantisano; Lucci, Luca; E., Cartier; A., Kerber; G., Groeseneken; M., Green; Selmi, Luca
Influence of interface traps on ferroelectric NC-FETs
2018-01-01 Rollo, Tommaso; Esseni, David
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors
2013-01-01 Knoll, L; Zhao, Q. J.; Nichau, A; Trellenkamp, S; Richter, S; Schäfer, A; Esseni, David; Selmi, Luca; Bourdelle, K. K.; Mantl, S.
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading
2014-01-01 Sylvan, Brocard; Marco G., Pala; Esseni, David
Minimizing thermal resistance and collector-to-substrate capacitance in graded base SiGe BiCMOS on SOI
2002-01-01 M., Mastrapasqua; Palestri, Pierpaolo; A., Pacelli; G. K., Celler; M. R., Frei; P. R., Smith; R. W., Johnson; L., Bizzarro; W., Lin; T. G., Ivanov; M. S., Carroll; I. C., Kizilyalli; C. A., King
Mobility simulation of a novel Si/SiGe FET structure
1996-01-01 Abramo, Antonio; J., Bude; F., Venturi; M. R., Pinto
Monte Carlo Simulation of Impact Ionization in SiGe HBTs
2001-01-01 Palestri, Pierpaolo; Pacelli, A.; Mastrapasqua, M.; Bude, J. D.
New design perspective for Ferroelectric NC-FETs
2018-01-01 Rollo, Tommaso; Esseni, David
Non-Local Effects in p-MOSFET Substrate Hot Hole Injection Experiments
1995-01-01 Selmi, Luca; Sangiorgi, Enrico; Bez, R.
"Non-scaling of MOSFETs Linear Resistance in the Deep Sub-micron Regime"
1998-01-01 Esseni, David; H., Iway; M. SAITO AND B., Ricco
On the Apparent Mobility in Nanometric n-MOSFETs
2007-01-01 Zilli, M; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
On the electrical monitor for device degradation in the CHISEL stress regime
2003-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca
Physical origin of the excess thermal noise in short channel MOSFETs
2001-01-01 Goo, J. S.; Choi, C. H.; Abramo, Antonio; Ahn, J. G.; Yu, Z.; Lee, T. H.; Dutton, R. W.
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs
2018-01-01 Wang, H.; Jiang, X.; Xu, N.; Han, G.; Hao, Y.; Li, S. S.; Esseni, D.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Energy minimization and Kirchhoff’s laws in Negative Capacitance Ferroelectric Capacitors and MOSFETs | 1-gen-2017 | Rollo, Tommaso; Esseni, David | |
Evidence of Substrate Enhanced High Energy Tails in the Distribution Function of Deep Submicron MOSFETs by Light Emission Measurements | 1-gen-1999 | Pavesi, M; Selmi, Luca; Manfredi, M; Sangiorgi, Enrico; Mastrapasqua, M; Bude, J. | |
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers | 1-gen-2005 | Esseni, David; Palestri, Pierpaolo | |
Hot Hole Gate Current in Surface Channel p-MOSFETs | 1-gen-2001 | Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F. | |
Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K | 1-gen-1989 | Lanzoni, M; Manfredi, M; Selmi, Luca; Sangiorgi, Enrico; Cappelletti, R; Ricco, B. | |
Hysteresis cycle in the Latch-up characteristic of wide CMOS structures | 1-gen-1988 | Selmi, Luca; Sangiorgi, Enrico; Crisenza, G; Re, D; Ricco, B. | |
Impact of band structure on charge trapping in thin SiO2/Al2O3/Poly-Si gate stacks | 1-gen-2004 | L., Pantisano; Lucci, Luca; E., Cartier; A., Kerber; G., Groeseneken; M., Green; Selmi, Luca | |
Influence of interface traps on ferroelectric NC-FETs | 1-gen-2018 | Rollo, Tommaso; Esseni, David | |
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors | 1-gen-2013 | Knoll, L; Zhao, Q. J.; Nichau, A; Trellenkamp, S; Richter, S; Schäfer, A; Esseni, David; Selmi, Luca; Bourdelle, K. K.; Mantl, S. | |
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading | 1-gen-2014 | Sylvan, Brocard; Marco G., Pala; Esseni, David | |
Minimizing thermal resistance and collector-to-substrate capacitance in graded base SiGe BiCMOS on SOI | 1-gen-2002 | M., Mastrapasqua; Palestri, Pierpaolo; A., Pacelli; G. K., Celler; M. R., Frei; P. R., Smith; R. W., Johnson; L., Bizzarro; W., Lin; T. G., Ivanov; M. S., Carroll; I. C., Kizilyalli; C. A., King | |
Mobility simulation of a novel Si/SiGe FET structure | 1-gen-1996 | Abramo, Antonio; J., Bude; F., Venturi; M. R., Pinto | |
Monte Carlo Simulation of Impact Ionization in SiGe HBTs | 1-gen-2001 | Palestri, Pierpaolo; Pacelli, A.; Mastrapasqua, M.; Bude, J. D. | |
New design perspective for Ferroelectric NC-FETs | 1-gen-2018 | Rollo, Tommaso; Esseni, David | |
Non-Local Effects in p-MOSFET Substrate Hot Hole Injection Experiments | 1-gen-1995 | Selmi, Luca; Sangiorgi, Enrico; Bez, R. | |
"Non-scaling of MOSFETs Linear Resistance in the Deep Sub-micron Regime" | 1-gen-1998 | Esseni, David; H., Iway; M. SAITO AND B., Ricco | |
On the Apparent Mobility in Nanometric n-MOSFETs | 1-gen-2007 | Zilli, M; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
On the electrical monitor for device degradation in the CHISEL stress regime | 1-gen-2003 | Driussi, Francesco; Esseni, David; Selmi, Luca | |
Physical origin of the excess thermal noise in short channel MOSFETs | 1-gen-2001 | Goo, J. S.; Choi, C. H.; Abramo, Antonio; Ahn, J. G.; Yu, Z.; Lee, T. H.; Dutton, R. W. | |
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs | 1-gen-2018 | Wang, H.; Jiang, X.; Xu, N.; Han, G.; Hao, Y.; Li, S. S.; Esseni, D. |
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